vishay general semiconductor v30120s & VI30120S new product document number 88974 27-jul-06 www.vishay.com 1 high-voltage trench mos barrier schottky rectifier ultra low v f = 0.402 v at i f = 5 a features ? trench mos schottky technology ? low forward voltage drop, low power losses ? high efficiency operation ? low thermal resistance ? solder dip 260 c, 40 seconds ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec typical applications for use in high frequency inverters, switching power supplies, free-wheeling diodes, oring diode, dc-to-dc converters and reverse battery protection. mechanical data case: to-220ab & to-262aa epoxy meets ul 94v-0 flammability rating terminals: matte tin plated leads, solderable per j-std-002b and jesd22-b102d e3 suffix for commercial grade polarity: as marked mounting torque: 10 in-lbs maximum VI30120S 1 k 2 3 to-262aa case pin 2 pin 1 pin 3 k pin 2 pin 1 pin 3 to-220ab v30120s 1 2 3 major ratings and characteristics i f(av) 30 a v rrm 120 v i fsm 300 a v f at i f = 30 a 0.70 v t j max. 150 c maximum ratings (t a = 25 c unless otherwise noted) parameter symbol v30120s VI30120S unit maximum repetitive peak reverse voltage v rrm 120 v maximum average forward rectified current (see fig. 1) i f(av) 30 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 300 a peak repetitive reverse current per leg at t p = 2 s, 1 khz i rrm 1.0 a voltage rate of change (rated v r ) dv/dt 10000 v/s operating junction and storage temperature range t j , t stg - 20 to + 150 c electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit breakdown voltage at i r = 1.0 ma t j = 25 c v (br) 120 (minimum) - v instantaneous forward voltage (1) at i f = 5 a i f = 15 a i f = 30 a t j = 25 c v f 0.478 0.648 0.854 - - 0.95 v at i f = 5 a i f = 15 a i f = 30 a t j = 125 c 0.402 0.582 0.698 - - 0.75
www.vishay.com 2 document number 88974 27-jul-06 vishay general semiconductor v30120s & VI30120S note: (1) pulse test: 300 s pulse width, 1 % duty cycle ratings and characteristics curves (t a = 25 c unless otherwise noted) reverse current (1) at v r = 90 v t j = 25 c t j = 125 c i r 14.2 11.3 - - a ma at v r = 120 v t j = 25 c t j = 125 c 47.3 23.5 500 35 a ma thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol v30120s VI30120S unit typical thermal resistance r jc 2.2 c/w electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol typ. max. unit ordering information package preferred p/n unit weight (g) package code base quantity delivery mode to-220ab v30120s-e3/45 1.884 45 50/tube tube to-262aa VI30120S-e3/4w 1.456 4w 50/tube tube figure 1. forward current derating curve a v erage for w ard c u rrent ( a) case temperat u re (c) resisti v e or ind u cti v e load 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 figure 2. forward power loss characteristics 30 25 20 15 10 5 0 35 30 25 20 15 10 5 0 d = 0.1 d = 0.2 d = 0.3 d = 0.5 d = 0. 8 d = 1.0 d = tp/t tp t a v erage for w ard c u rrent (a) a v erage po w er loss ( w )
document number 88974 27-jul-06 www.vishay.com 3 v30120s & VI30120S vishay general semiconductor figure 3. maximum non-repetitiv e peak forward surge current figure 4. typical instantaneous forward characteristics figure 5. typical revers e leakage characteristics 300 250 150 50 200 100 0 1 10 100 nu m b er of cycles at 60 hz peak for w ard s u rge c u rrent (a) t j = t j max. 8 .3 ms single half sine- w a v e t j = 150 c t j = 125 c t j = 25 c 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 1.1 1.2 100 10 1 0.1 instantaneo u s for w ard v oltage ( v ) instantaneo u s for w ard c u rrent (a) t j = 150 c t j = 125 c t j = 25 c 100 10 10 20 30 40 50 60 70 8 0 90 100 1 0.1 0.01 0.001 percent of rated peak re v erse v oltage ( % ) instantaneo u s re v erse c u rrent (ma) figure 6. typical junction capacitance figure 7. typical transient thermal impedance t j = 25 c f = 1.0 mhz v sig = 50 m v p-p 10000 1000 100 0.1 1 10 100 re v erse v oltage ( v ) j u nction capacitance (pf) j u nction to case 10 1 0.1 0.01 0.1 1 10 100 t - p u lse d u ration (s) transient thermal impedance (c/ w )
www.vishay.com 4 document number 88974 27-jul-06 vishay general semiconductor v30120s & VI30120S package outline dimensions in inches (millimeters) t o-220ab 1 3 pi n 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.6 8 ) 0.135 (3.43) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 0.603 (15.32) 0.573 (14.55) 0.154 (3.91) 0.14 8 (3.74) 0.113 (2. 8 7) 0.103 (2.62) 0.160 (4.06) 0.140 (3.56) 0.635 (16.13) 0.625 (15. 8 7) 0.415 (10.54) max. 0.370 (9.40) 0.360 (9.14) 0.02 8 (0.70) 0.104 (2.65) 0.096 (2.45) 0.035 (0.90) 0.205 (5.20) 0.195 (4.95) 0.105 (2.67) 0.095 (2.41) 0.057 (1.45) 0.045 (1.14) 2 1.14 8 (29.16) 1.11 8 (2 8 .40) 0.035 (0.90) 0.02 8 (0.70) 0.055 (1.40) 0.047 (1.19) 0.510 (12.95) 0.470 (11.94) k pi n 0.104 (2.65) 0.096 (2.45) 0.205 (5.20) 0.195 (4.95) 0.057 (1.45) 0.045 (1.14) 30 (typ) (ref) 0.411 (10.45) max. to-262aa 123 0.250 (6.35) min. 0.160 (4.06) 0.140 (3.56) 0.950 (24.13) 0.920 (23.37) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.35) 0.350 ( 8 . 8 9) 0.330 ( 8 .3 8 ) 0.110 (2.79) 0.100 (2.54) 0.401 (10.19) 0.3 8 1 (9.6 8 ) 0.1 8 5 (4.70) 0.175 (4.44) 0.055 (1.40) 0.045 (1.14)
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